Yb:CALGO (Yb:CaGdAlO₄) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Yb:CALGO (Yb:CaGdAlO₄) Crystal
Yb:CaGdAlO₄(also known as Yb:CALGO ) is a novel laser crystal that boasts outstanding advantages and holds great promise for a wide range of applications.
Product Introduction
Yb:CaGdAlO₄(also known as Yb:CALGO ) is a novel laser crystal that boasts outstanding advantages and holds great promise for a wide range of applications. Recent studies have revealed that Yb-doped CaGdAlO₄ crystals (Yb:CALGO) exhibit exceptional performance in generating high-power and ultrashort laser pulses. Featuring a broad and smooth emission bandwidth, these crystals can produce pulses as short as less than 100 femtoseconds. The crystal structure belongs to the tetragonal system. When pumped with a 979 nm π-polarized light source, Yb:CALGO efficiently emits light polarized along the Theta direction at 1050 nm—a feature that translates into remarkably low quantum defects (as low as 1.5%) and opens up significant potential for generating ultrafast pulses. Moreover, Yb:CALGO demonstrates an impressive thermal conductivity of up to k = 6.7 W/m/K, making it ideally suited for high-power laser applications. Its exceptional heat dissipation capability also enables stable operation under intense power pumping conditions; for instance, Yb-doping levels as low as 2 atomic percent result in thermal conductivities of 6.9 W/(K·m) along the a-axis and 6.3 W/(K·m) along the c-axis. These properties have already been leveraged to successfully generate ultrashort pulses and achieve high-average-power femtosecond oscillators.
Key Advantages
- Low-refractive-index temperature gradient
- High thermal conductivity
-The 979 nm band exhibits a high absorption coefficient.
- Large stimulated emission cross section
- Offers high slope efficiency (up to 55%) when pumped by a laser diode
- Broadband output at 994–1050 nm
- Extremely low quantum defectApplication Areas
- Solid-state femtosecond oscillator
- Multifoton imaging
- Refractive surgery
- Particle acceleration
- Mode-locked laser
- BAW equipment
- Diode-pumped short-pulse mode-locked laserProduct Features
Material Properties
Crystal Structure
Tetragonal
Lattice Constant
a=3.6585Å, c=11.978 Å
Density
4.8 g/cm³
Mohs Hardness
6 Mohs
Thermal Expansion Coefficient
10.1×10-6/K(∥a); 16.2×10-6/K(∥c)
Thermal Conductivity
K [001]=6.3 W/m/K; K[100]=6.9 W/m/K
Laser Wavelength
994–1050 nm
Absorption Wavelength
979 nm
Melting Point
1850 °C
Absorption Cross Section (979 nm, π-polarized)
2.7×10⁻²⁰ cm²
Product Processing Indicators
Yb: Standard Doping Concentration
1–5 %
Effective Aperture
>90%
Maximum Length
50 mm
Dimensional Tolerance
Diameter tolerance:±0.1 mm, Length tolerance:±0.3 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤ λ/10@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Coating
AR coating:R<0.2%@1030 nm,R<0.5%@980 nm;
(Customized to Customer Specifications).
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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