Yb:KGW (Ytterbium-doped Potassium Gadolinium Tungstate)
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Yb:KGW (Ytterbium-doped Potassium Gadolinium Tungstate)
Yb:KGW crystal, formally known as Ytterbium-doped Potassium Gadolinium Tungstate crystal with the chemical formula Yb:GdY(WO₄)₂, represents an exceptional laser gain material that demonstrates multiple significant advantages over conventional Nd³⁺-doped materials.
Product Introduction
Yb:KGW crystal, formally known as Ytterbium-doped Potassium Gadolinium Tungstate crystal with the chemical formula Yb:GdY(WO₄)₂, represents an exceptional laser gain material that demonstrates multiple significant advantages over conventional Nd³⁺-doped materials. Yb:KGW is a cutting-edge ytterbium-doped crystal specifically designed for semiconductor-pumped solid-state lasers. As a laser material, Yb:KGW excels in generating ultra-short, high-power pulses, making it ideal for use as an ultrafast pulse amplifier. Notably, this crystal boasts a broad gain bandwidth, enabling the generation of pulses as short as under 100 fs when operated in mode-locking mode. Additionally, its wide emission spectrum ranging from 1023 to 1060 nm allows for the creation of ultrashort laser pulses—either in the picosecond or femtosecond regime. Furthermore, Yb:KGW features an exceptionally broad absorption spectrum centered at 980 nm, coupled with high absorption efficiency for pump radiation, which makes it highly compatible with diode laser pumping systems. With their exceptional absorption and emission cross-sections, Yb:KGW (ytterbium-doped potassium gadolinium tungstate) crystals have proven invaluable in applications involving short pulses and ultrafast processes. These remarkable materials have already revolutionized multiple fields, leveraging their unique properties to deliver precise, efficient, and superior-quality results.
Yb:KGW crystals are poised to replace both Nd:YAG and Yb:YAG crystals in high-power diode-pumped laser systems. Additionally, Yb:KGW holds tremendous potential for high-power, ultra-short-femtosecond lasers and their wide-ranging applications.
Key Advantages
- Broadband polarization output at 1023~1060 nm
- Large stimulated emission cross section
- Low quantum defect
- High Yb doping concentration
- Extremely low quantum loss
- High absorption coefficientApplication Areas
- Nonlinear microscope
-Yb:KGW oscillator
- Femtosecond lasers and regenerative amplifiers
- Precision micromachining
- Continuous and passively mode-locked thin-disk laserProduct Features
Material Properties
Crystal Structure
Monoclinic
Density
7.27 g/cm³
Mohs Hardness
5 Mohs
Thermal Expansion Coefficient @ 373 K
α[100]=4×10-6/K;α[010]=1.6×10-6/K;α[001]=8.5×10-6/K
Thermal Conductivity @ 373 K
K[100]=2.6 W/m/K, K[010]=3.8 W/m/K;
K[001]=3.4W/m/K
Laser Wavelength
1023~1060 nm
Refractive Index @ 632.8 nm
ng=2,037, np=1,986, nm=2,033
Melting Point
1075 °C
Fluorescence Lifetime
600 μs (5% doping)
Absorption Band
981 nm (FWHM 3.7 nm)
Product Processing Indicators
Standard doping Concentration
Yb:5 at.%
Orientation
[010]
Effective Aperture
>90%
Maximum Length
50 mm
Dimensional Tolerance
Diameter tolerance:±0.1 mm Length tolerance:±0.3 mm
Chamfer
≤0.2×45°
Surface Quality
20-10 S-D
Flatness
≤λ/6@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Coating
AR coating:R<0.2%@1030 nm,R<0.5%@980 nm;
(Customized to Customer Specifications).
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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