Nd:YLF (Neodymium-doped Yttrium Lithium Fluoride ）Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Nd:YLF (Neodymium-doped Yttrium Lithium Fluoride ）Crystal
Nd:YLF (Neodymium-doped Lithium Yttrium Fluoride) crystals exhibit an exceptionally broad fluorescence linewidth, minimal thermal lensing effects, and the unique property of self-generated linearly polarized light.
Product Introduction
Neodymium-doped Lithium Yttrium Fluoride (Nd:YLF) crystals boast an exceptionally broad fluorescence linewidth, minimal thermal lensing effects, and exhibit intrinsic linear polarization of their emitted light. These crystals are highly suitable for mode-locking applications, making them ideal for generating ultrashort laser pulses. As a result, Nd:YLF finds extensive use in fields such as mode-locked lasers, continuous-wave lasers, and material processing. Nd:YLF serves as a promising alternative to Nd:YAG, particularly for operation in the near-infrared region, where it can generate lasers at wavelengths of 1047 nm and 1053 nm. Its versatility makes it a key component in applications ranging from linearly polarized resonators and mode-locked lasers to diode-pumped Nd:YLF lasers and Ti:sapphire-based chirped-pulse amplifiers.
Key Advantages
- Natural polarization
- Ultra-wide fluorescence linewidth
- High UV transparency
- Low-heat lens effect
- Continuous lasers require a lower excitation light threshold.
- High power, low beam divergence, and efficient single-mode operation
- Suitable for medium-repetition-rate, high-average-power Q-switched mode-locked operation
- Operates effectively in single-mode, delivering high power with a low beam divergence angleApplications
- Mode-locked laser
- Ultra-short pulse laser
- Material processing, welding, and cutting
-Ti: Sapphire chirped pulse amplifier
- Diode-pumped Nd:YLF laser
- Linear Polarization Resonator Q-Switch and Frequency Doubling
- Continuous-wave and pulsed operation at 1047 nm and 1053 nmFeatures
Material Properties
Crystal Structure
Tetragonal
Nd Atom Concentration
1.40×10²⁰ atoms/cm³, with 1% Nd doping
Density
3.99 g/cm³
Mohs Hardness
4–5 Mohs
Thermal Expansion Coefficient
8.3×10-6/K∥c; 13.3×10-6/K⊥c
Thermal Conductivity
0.063 W/cm/K
Laser Wavelength
1047 nm (parallel to the c-axis, a-cut crystal)
1053 nm (⊥c, along the a or c crystal axis)
Transmission Range
180–6700 nm
Scattering Loss
<0.2% /cm
Fluorescence Lifetime
485 µs (1% Nd-doped)
Refractive Index
n0=1.443 ne=1.464@633 nm
n0=1.448 ne=1.470@1064 nm
Product Processing Indicators
Typical doping Range
1–2 at.%
Effective Aperture
>90%
Dimensions
Diameter: 2–10 mm, Length: 1–150 mm (customizable)
Orientation Tolerance
Φ:+0/-0.04 mm, L:+0.5/-0 mm
Chamfer
≤0.2×45°
Surface Quality
10–5 S-D
Flatness
≤λ/10@632.8 nm
Wavefront Distortion
≤λ/8@633 nm
Parallelism
<20"
Perpendicularity
≤15′
Angle Tolerance
≤0.5°
Chipped Edge
<0.1 mm
Coating
AR: R≤0.15%@1047 nm R≤0.15%@1053 nm
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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