Nd:GdVO₄ (Neodymium-doped Gadolinium Vanadate) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Nd:GdVO₄ (Neodymium-doped Gadolinium Vanadate) Crystal
Nd:GdVO₄ (Neodymium-doped Gadolinium Vanadate) laser crystals exhibit properties similar to those of Nd:YVO₄ laser crystals, boasting excellent optical, physical, and mechanical characteristics. They are one of the ideal laser materials for diode-pumped, all-solid-state (DPSS) micro-laser systems.
Product Introduction
Nd:GdVO₄ (Neodymium-doped Gadolinium Vanadate) laser crystals share similar properties with Nd:YVO₄ laser crystals, boasting excellent optical, physical, and mechanical characteristics. They are an ideal laser medium for diode-pumped, all-solid-state (DPSS) micro-lasers—particularly compact ones. Compared to Nd:YAG, Nd:GdVO₄ exhibits higher slope efficiency, while offering superior thermal conductivity and enabling higher output power than Nd:VO₄. As a result, Nd:GdVO₄ delivers even better performance in high-power DPSS applications.
Key Advantages
- Large stimulated emission cross section
- High absorption coefficient and wide absorption bandwidth, with minimal dependence on the pump wavelength
- Excellent thermal conductivity
- Low laser threshold with high laser output slope efficiency
- High laser damage threshold
- The laser output has excellent polarization.Application Areas
- Distance measurement
- Laser-diode-pumped all-solid-Sstate (DPSS) miniaturized laser
- Remote sensing
- TelemetryProduct Features
Material Properties
Crystal Structure
Tetragonal, Space Group D4h, a=b=7.21, c=6.35
Lattice Constant
a=7.21Å, c=6.35Å
Density
5.47 g/cm³
Mohs Hardness
5 Mohs
Melting Point
1780 °C
Refractive Index (@1064 nm)
no=1.972, ne=2.192
Thermal Expansion Coefficient
aa=1.5×10-6/K, ac=7.3×10-6/K
Thermal Conductivity <110>
11.7 W/m/K
Laser Wavelength
1062.9 nm
Emission Cross-Section (@1064 nm)
7.6×10-19cm²
Absorption Cross Section (@808 nm)
4.9×10-19cm²
Fluorescence Lifetime
90 μs (1% Nd-doped)
Absorption Coefficient (808 nm)
74 cm-1
Polarization
Parallel to the c-axis
Product Processing Indicators
Nd Doping Concentration
0.1~3.0 at.%
Effective Aperture
>90%
Dimensional Tolerance
(W±0.1 mm)×(H±0.1 mm)×(L+0.2/-0.1 mm)
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/8@632.8 nm
Wavefront Distortion
≤λ/4@633 nm
Parallelism
<20"
Perpendicularity
≤15′
Angle Tolerance
≤0.5°
Chipped Edge
<0.1 mm
Coating
AR:R<0.2%@1064 nm
HR: R>99.8% @1064 nm, T>95% @808 nm
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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