Nd:YVO₄ (Neodymium-doped Yttrium Vanadate) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Nd:YVO₄ (Neodymium-doped Yttrium Vanadate) Crystal
Nd:YVO₄ (Neodymium-doped Yttrium Vanadate) crystal is an outstandingly performing, commercially available laser crystal widely used in the fabrication of diode-pumped lasers, particularly for medium- and low-power applications.
Product Introduction
Nd:YVO₄ (Neodymium-doped Yttrium Vanadate) crystal is an outstandingly performing, commercially available laser crystal widely used in the fabrication of diode-pumped lasers, particularly for medium- and low-power applications. Compared to Nd:YAG, Nd:YVO₄ boasts a significantly higher absorption coefficient for pump light and a larger stimulated emission cross-section. When combined with nonlinear crystals such as LBO, BBO, and KTP, Nd:YVO₄ crystals enable highly efficient frequency-doubling conversions, making it possible to create solid-state lasers that emit in near-infrared, green, blue, and ultraviolet wavelengths. Today, Nd:YVO₄ lasers have found extensive applications across diverse fields, including machinery, material processing, spectroscopy, wafer inspection, optical display systems, medical diagnostics, laser printing, and data storage. Moreover, diode-pumped Nd:YVO₄ solid-state lasers are rapidly gaining traction in replacing traditional water-cooled ion lasers and lamp-pumped lasers—especially in scenarios demanding compact designs and single-longitudinal-mode outputs.
Key Advantages
- Low laser threshold and high slope efficiency
- Uniaxial birefringent crystal, with linearly polarized output
- High absorption gain cross-section
- Strongly polarized absorption and emission spectra (π-polarization performs better)
- The pull method yields high optical quality and large diameters.Application Areas
- Optical communications
- Holography
- Military sector
- Medical testing
- Laser printing
- High-repetition-rate Q-wwitched laser for marking and engraving
- Mode-locked laser for spectroscopic studiesProduct Features
Material Properties
Crystal Structure
Tetragonal, Space Group D4h-I4/amd
Lattice Constant
a=b=7.1193 Å, c=6.2892 Å
Density
4.22 g/cm³
Atomic Density
1.26×10²⁰ atoms/cm³ (Nd 1.0%)
Mohs Hardness
4~5 Mohs (similar to glass)
Thermal Expansion Coefficient (300K)
αA=4.43×10-6/K
αc=11.37×10-6/K
Thermal Conductivity (300K)
//C: 5.23 W/m/K
⊥C: 5.10 W/m/K
Laser Wavelength
1064 nm, 1342 nm
Thermal-Optical Coefficient (300K)
dno/dT=8.5×10-6 /K
dN/dT=2.9×10-6 /K
Stimulated Emission Cross Section
25×10-19cm²@1064 nm
Fluorescence Lifetime
90 μs (1% Nd-doped)
Absorption Coefficient
31.4cm-1@810nm
Intrinsic Loss
0.02 cm-1@1064 nm
Gain-Bandwidth
0.96 nm@1064 nm
Polarized Laser Radiation
π-polarization; parallel to the optical axis (c-axis)
Light-to-Electricity Conversion Efficiency
>60%
Sellmeier Equation (λ in µm)
NO₂=3.77834+0.069736/(λ) ²-0.04724-0.010813λ²
ne2=4.59905+0.110534/λ ²-0.04813-0.012676λ ²
Product Processing Indicators
End face
Wedge-angle surface and double plane
Effective Aperture
>90%
Orientation Tolerance
(W±0.1 mm)×(H±0.1 mm)×(L+0.5/-0.1 mm) (L≥2.5 mm)
(W±0.1 mm) × (H±0.1 mm)×(L+0.1/-0.1 mm) (L<2.5 mm)
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/8@632.8 nm
Wavefront Distortion
≤λ/4@633 nm
Parallelism
<20"
Perpendicularity
≤15′
Angle Tolerance
≤0.5°
Chipped Edge
<0.1 mm
Coating
AR/HR/Metallic Film (Custom Solutions Available)
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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