YSO (Ce) (Cerium-doped Yttrium Orthosilicate) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: YSO (Ce) (Cerium-doped Yttrium Orthosilicate) Crystal
YSO (Ce) (Cerium-doped Yttrium Orthosilicate) Crystal doped with Ce³⁺ ions, are to boost luminescence for applications like PET imaging.
Product Introduction
YSO (Ce) (Cerium-doped Yttrium Orthosilicate) Crystal doped with Ce³⁺ ions, are to boost luminescence for applications like PET imaging.
YSO:Ce crystals exhibit excellent energy resolution, high light output, and fast decay time, along with good radiation resistance, superior mechanical properties, and resistance to deliquescence. YSO(Ce) scintillator crystals are widely used in fields such as high-energy physics, nuclear physics, space physics, industrial non-destructive testing (NDT), nuclear medicine gamma cameras, positron emission tomography (PET), and other medical imaging applications for detecting and imaging gamma rays emitted by radioactive isotopes.
Key Advantages
- High radiation resistance
- Fast decay time
- Excellent energy resolution
- High light output
- Good mechanical properties and non-deliquescentApplication Areas
- High-energy physics, nuclear physics, and space physics
- Nuclear medicine gamma cameras and other medical imaging equipment
- Industrial non-destructive testing
- Positron emission tomography (PET)
- Security industry, semiconductors, optical applicationsProduct Features
Material Properties
Density
4.5 g/cm³
Mohs Hardness
5.8 Mohs
Cleavage Plane
None
Deliquescence
None
Decay Time
62 ns
Emission Peak Wavelength
410 nm
Refractive Index
1.82
Radiation-resistant Performance
1×108 rad
Light Output
28000 Photon/Mev
Melting Point
2273°C
Product Processing Indicators
Effective Aperture
>90%
Dimensions
Customized to Customer Specifications
Diameter Tolerance
+0/-0.05 mm
Length Tolerance
±0.2 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/10@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Coating
Customized to Customer Specifications
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- Luminescent properties
- Radiation resistance
- Short decay time
- Fine energy resolution
- Non-hygroscopic -
- High-energy physics experiments
- Nuclear Medicine
- Environmental Monitoring
- Space Science
- Large Electron-Positron Collider
- Dark Matter Detection -
Material Properties Molecular formula Bi4Ge3O12 Crystal structure Cubic crystal system Lattice constant a = 1.0518 Å Production method Tiraf Method Density 7.12g/cm3 Mohs Hardness 5Mohs Radiation Length 1.1cm Transmittance range 350 nm ~ 5500 nm Relative Light Output (%) 10-14 Nal (Tl) Fluorescence spectrum peak 480–510 nm Recession time 300ns Energy resolution 20 (511 keV, %) Refractive index 2.098 @ 632.8 nm Melting point 1050°C Product Processing Metrics Directional <001> +/- 0.5° Effective Aperture >90% Dimensions Customized to customer specifications Diameter Tolerance +0 / -0.05 mm Length Tolerance ±0.2mm Protective Chamfer ≤0.2 × 45° Surface finish 10-5 S-D Flatness ≤λ/10 @ 632.8 nm Analyzing wavefront distortion ≤λ/8 @ 632.8 nm Parallelism <20" Verticality ≤15′ Chipped edge < 0.1 mm Coating Customized to customer specifications
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