NaI (Tl) (Thallium-doped Sodium Iodide)

Sodium iodide is one of the most widely used materials in scintillator applications, and it can be employed both as a single crystal and as a polycrystal.Thallium-doped sodium iodide (NaI(Tl)) crystals are high-performance scintillation crystals.

Keywords:

Scintillation Crystals

Product Category:

  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: NaI (Tl) (Thallium-doped Sodium Iodide)

    Sodium iodide is one of the most widely used materials in scintillator applications, and it can be employed both as a single crystal and as a polycrystal.Thallium-doped sodium iodide (NaI(Tl)) crystals are high-performance scintillation crystals.

    Product Introduction

    Sodium iodide is one of the most widely used materials in scintillator applications, and it can be employed both as a single crystal and as a polycrystal.

    Thallium-doped sodium iodide (NaI(Tl)) crystals are high-performance scintillation crystals. These crystals are grown by adding an appropriate concentration of the activator thallium (Tl) to a sodium iodide (NaI) matrix material. They exhibit a peak emission wavelength of 415 nm, which perfectly matches the photocathode of commonly used photomultiplier tubes.

    Single-crystal NaI(Tl) exhibits planar cleavage under similar shock conditions. In detector components made from single-crystal materials, even tiny cracks can propagate throughout the entire crystal, potentially disrupting light collection and degrading pulse height resolution.

    The polycrystalline structure originates from a unique manufacturing process: a single-crystal ingot undergoes recrystallization under heat and pressure. The resulting material is characterized as a polycrystalline (thermally forged crystalline) material, featuring an interwoven microstructure of randomly oriented crystalline grains. Notably, the density of NaI remains unchanged throughout this process. While this property significantly enhances mechanical strength, it has no impact on scintillation performance, as polycrystalline NaI(Tl) material is optically identical to its single-crystal counterpart. Moreover, any fractures caused by thermal or mechanical shocks are typically confined—or at least limited—to small, localized grain volumes. Because the cleavage planes of these grains are randomly oriented, minor cracks are highly unlikely to propagate across grain boundaries. This makes polycrystalline NaI(Tl) the material of choice for applications where robustness is critical, such as well logging, measurement while drilling (MWD), and aerospace applications.

     

    Key Advantages

    - High light output 
    - Available in single crystal and polycrystalline forms 
    - Minimal self-absorption of scintillation light 
    - The emission spectrum well-matched to the sensitivity curve of alkali Photocathode photomultiplier tube (PMT).
    - High detection efficiency

     

    Application Areas

    -In γ cameras, positron emission tomography (PET) scanners, and tther radiation detection systems 
    - Nuclear medicine, nuclear physics, radiation detection 
    - Aerial surveying, environmental monitoring 
    - Well logging and scientific research

     

    Product Features

    Material Properties

    Density

    3.67 g/cm³

    Thermal Expansion Coefficient (K⁻¹)

    47.4 × 10 -6

    Mohs Hardness

    2.1 Mohs

    Cleavage Plane

    (100)

    Deliquescence

    Yes

    Decay Time

    250 ns

    Emission Peak Wavelength

    415 nm

    Refractive Index (at the maximum emission wavelength)

    1.85

    Afterglow

    0.3–0.5% @ 6 mm

    Temperature Coefficient

    0.3% C-1

    Light Output

    38000 Photon/Mev

    Melting Point

    651°C

    Product Processing Indicators

    Effective Aperture

    >90%

    Dimensions

    Customized to Customer Specifications

    Diameter Tolerance

    +0/-0.05 mm

    Length Tolerance

    ±0.2 mm

    Chamfer

    ≤0.2×45°

    Surface Quality

    40-20 S-D

    Flatness

    ≤λ/6 @ 632.8 nm

    Parallelism

    <20"

    Perpendicularity

    ≤15′

    Chipped edge

    <0.1 mm

    Coating

    Customized to Customer Specifications

  • - Luminescent properties
    - Radiation resistance
    - Short decay time
    - Fine energy resolution
    - Non-hygroscopic

  • - High-energy physics experiments
    - Nuclear Medicine
    - Environmental Monitoring
    - Space Science
    - Large Electron-Positron Collider
    - Dark Matter Detection

  • Material Properties
    Molecular formula Bi4Ge3O12
    Crystal structure Cubic crystal system
    Lattice constant a = 1.0518 Å
    Production method Tiraf Method
    Density 7.12g/cm3
    Mohs Hardness 5Mohs
    Radiation Length 1.1cm
    Transmittance range 350 nm ~ 5500 nm
    Relative Light Output (%) 10-14 Nal (Tl)
    Fluorescence spectrum peak 480–510 nm
    Recession time 300ns
    Energy resolution 20 (511 keV, %)
    Refractive index 2.098 @ 632.8 nm
    Melting point 1050°C
    Product Processing Metrics
    Directional <001> +/- 0.5°
    Effective Aperture >90%
    Dimensions Customized to customer specifications
    Diameter Tolerance +0 / -0.05 mm
    Length Tolerance ±0.2mm
    Protective Chamfer ≤0.2 × 45°
    Surface finish 10-5 S-D
    Flatness ≤λ/10 @ 632.8 nm
    Analyzing wavefront distortion ≤λ/8 @ 632.8 nm
    Parallelism <20"
    Verticality ≤15′
    Chipped edge < 0.1 mm
    Coating Customized to customer specifications

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