CsI (Cesium Iodide)

Cesium Iodide (CsI) scintillation crystals belong to the CsI scintillator category, with their emission spectrum located in the wavelength range between ultraviolet and visible light.

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Scintillation Crystals

Product Category:

  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: CsI (Cesium Iodide)

    Cesium Iodide (CsI) scintillation crystals belong to the CsI scintillator category, with their emission spectrum located in the wavelength range between ultraviolet and visible light.

    Product Introduction

     Cesium Iodide (CsI) Scintillation Crystals‌ belong to the CsI scintillator category, with their emission spectrum spanning the ultraviolet to visible light wavelength range.

    CsI scintillation crystals are made of cesium iodide as the base material and can be classified into three types:Tl-activated (CsI(Tl))‌,Na-activated (CsI(Na))‌,Pure CsI (CsI)‌.All three are colorless, transparent cubic crystals. They are characterized by their ‌high density‌ and ‌high average atomic number‌, which contribute to excellent ‌γ-ray and X-ray detection efficiency‌. Additionally, CsI crystals are ‌cleavage-free‌, making them easy to machine into various detector shapes.

    The emission peak of pure CsI scintillators lies between 310 and 420 nm, depending on the nature of the radiation interaction and the excitation source. Compared to doped CsI crystals—such as CsI(Tl) or CsI(Na)—pure CsI offers a moderate light output, yet still sufficient to meet the requirements of certain detection applications. Perhaps most notably, pure CsI scintillation crystals stand out for their exceptionally short decay time, making them highly suitable for fast timing applications. Additionally, undoped CsI scintillation crystals exhibit a unique combination of fast and slow luminescent components. Their emission spectrum consists of a rapid intrinsic glow peaking around 305 nm (with a decay time of approximately 10 ns) and a slower component peaking between 350 and 600 nm, with decay times ranging from 100 to 4,000 ns. This 10-nanosecond fast-emission component makes pure CsI an ideal choice for time-sensitive measurements.

    Compared to CsI doped with Tl or Na, the drawback of undoped CsI is that its light output in pure crystals is lower than that of CsI(Tl) and CsI(Na). Therefore, when time resolution is more critical than light output, pure CsI is typically the preferred choice. Another limitation of pure CsI is that its emission spectrum may not align as well with photodetectors.

    CsI scintillation crystals are widely used in high-energy physics, nuclear physics, space physics, luggage security screening, radiation detectors, medical SPECT applications, university and research institute experiments, container inspection, industrial level gauges, well logging, space exploration, and more.

     

    Key Advantages

    - High average atomic number‌ ensures excellent ‌detection efficiency for γ-rays and X-rays‌.
    - No cleavage planes‌ in the crystal structure, enabling ‌easy machining‌ and fabrication into ‌various detector shapes‌.
    - Excellent spectral match‌ with photodiodes (PD) at ‌550 nm‌ (long-wavelength emission).
    - High light output‌ (especially in doped variants like CsI(Tl)).
    - High energy resolution‌ (critical for distinguishing between different energy photons).

     

    Application Areas

    - High energy physics, nuclear physics, space physics 
    - Luggage security checks, container inspections, industrial level gauges, Well logging 
    - Radiation detector 
    - Medical SPECT 
    - University and research institute experiments 
    - Space research and more

     

    Product Features

    Material Properties

    Parameters

    CsI(Tl)

    CsI(Na)

    CsI (undoped)

    Density

    4.51 g/cm³

    4.51 g/cm³

    4.51 g/cm³

    Mohs Hardness

    2 Mohs

    2 Mohs

    2 Mohs

    Decay Time

    1 μs

    0.63 μs

    0.016 μs

    Coefficient of Thermal Expansion (K⁻¹)

    54 × 10⁻⁶

    49 × 10⁻⁶

    49 × 10⁻⁶

    Cleavage Plane

    None

    None

    None

    Moisture Absorption

    Mild

    Is

    Mild

    Refractive Index

    1.95

    1.79

    1.95

    Emission Peak Wavelength

    550 nm

    420 nm

    315 nm

    Lower cutoff wavelength

    320 nm

    300 nm

    260 nm

    Melting Point

    621°C

    621°C

    621°C

    Light Output (photons/MeV/γ)

    52~56 x 10³

    38~44 x 10³

    2 × 10³

    Light yield (percentage of NaI(Tl)) (γ-ray)

    45

    85

    4 to 6

    Product Processing Indicators

    Effective Aperture

    >90%

    Dimensions

    Customized to Customer Specifications

    Diameter Tolerance

    +0/-0.05 mm

    Length Tolerance

    ±0.2 mm

    Chamfer

    ≤0.2×45°

    Surface Quality

    40-20 S-D

    Flatness

    ≤λ/6@632.8 nm

    Parallelism

    <20"

    Perpendicularity

    ≤15′

    Chipped Edge

    <0.1 mm

    Coating

    Customized to meet customer demands

  • - Luminescent properties
    - Radiation resistance
    - Short decay time
    - Fine energy resolution
    - Non-hygroscopic

  • - High-energy physics experiments
    - Nuclear Medicine
    - Environmental Monitoring
    - Space Science
    - Large Electron-Positron Collider
    - Dark Matter Detection

  • Material Properties
    Molecular formula Bi4Ge3O12
    Crystal structure Cubic crystal system
    Lattice constant a = 1.0518 Å
    Production method Tiraf Method
    Density 7.12g/cm3
    Mohs Hardness 5Mohs
    Radiation Length 1.1cm
    Transmittance range 350 nm ~ 5500 nm
    Relative Light Output (%) 10-14 Nal (Tl)
    Fluorescence spectrum peak 480–510 nm
    Recession time 300ns
    Energy resolution 20 (511 keV, %)
    Refractive index 2.098 @ 632.8 nm
    Melting point 1050°C
    Product Processing Metrics
    Directional <001> +/- 0.5°
    Effective Aperture >90%
    Dimensions Customized to customer specifications
    Diameter Tolerance +0 / -0.05 mm
    Length Tolerance ±0.2mm
    Protective Chamfer ≤0.2 × 45°
    Surface finish 10-5 S-D
    Flatness ≤λ/10 @ 632.8 nm
    Analyzing wavefront distortion ≤λ/8 @ 632.8 nm
    Parallelism <20"
    Verticality ≤15′
    Chipped edge < 0.1 mm
    Coating Customized to customer specifications

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