GOS (Gadolinium Oxysulfide) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: GOS (Gadolinium Oxysulfide) Crystal
GOS (Gadolinium Oxysulfide) Crystal,with chemical formula Gd₂O₂S, is a ceramic scintillator characterized by its hexagonal crystal structure. It functions as a high-efficiency phosphor, widely used to convert X-rays into visible light in various imaging applications.
Product Introduction
GOS (Gadolinium Oxysulfide) Crystal,with chemical formula Gd₂O₂S, is a ceramic scintillator characterized by its hexagonal crystal structure. It functions as a high-efficiency phosphor, widely used to convert X-rays into visible light in various imaging applications.
GOS is a ceramic-type scintillating crystal known for its main emission peak at 512 nm, high light output, and exceptionally low afterglow—less than 0.1% with a decay time of just 3 ms. It also boasts excellent moisture resistance, is free from toxic substances, and is easy to process. Depending on the dopant used, GOS can be categorized into GOS (Tb) and GOS (Pr), making it widely applicable in areas such as X-ray cargo detectors, foreign-object detectors, analytical instruments, radiation sensors, nuclear medicine imaging systems, industrial inspection equipment, and even custom fabrication into multi-pixel linear arrays or 2D array configurations tailored to specific customer needs.
Key Advantages
- High sensitivity
- Low afterglow
- Fast conversion
- High luminous efficiency
- High light output
- High x-ray absorption efficiencyApplication Areas
- Security and industrial inspection
- PET-CT
- Industrial exploration
- Medical CT
- X-ray CT, x-ray Microscopy, laser materialsProduct Features
Material Properties
Parameters
GOS (Pr)
GOS (Tb)
Density
7.34 g/cm³
7.34 g/cm³
Transparency
Translucent
Translucent
Mohs Hardness
4.5 Mohs
4.5 Mohs
Cleavage Plane
None
None
Deliquescence
None
None
Decay Time
3 ns
600 ns
Emission Peak Wavelength
510 nm
550 nm
Refractive Index
2.2
2.2
Afterglow
<0.1%@3ms
<0.1%@20ms
Light Output
28000 Photon/Mev
45000 Photon/Mev
Melting Point
2070°C
2070°C
Product Processing Indicators
Effective Aperture
>90%
Dimensions
Customized to Customer Specifications
Diameter Tolerance
+0/-0.05 mm
Length Tolerance
±0.2 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/10@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Coating
Customized to Customer Specifications
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- Luminescent properties
- Radiation resistance
- Short decay time
- Fine energy resolution
- Non-hygroscopic -
- High-energy physics experiments
- Nuclear Medicine
- Environmental Monitoring
- Space Science
- Large Electron-Positron Collider
- Dark Matter Detection -
Material Properties Molecular formula Bi4Ge3O12 Crystal structure Cubic crystal system Lattice constant a = 1.0518 Å Production method Tiraf Method Density 7.12g/cm3 Mohs Hardness 5Mohs Radiation Length 1.1cm Transmittance range 350 nm ~ 5500 nm Relative Light Output (%) 10-14 Nal (Tl) Fluorescence spectrum peak 480–510 nm Recession time 300ns Energy resolution 20 (511 keV, %) Refractive index 2.098 @ 632.8 nm Melting point 1050°C Product Processing Metrics Directional <001> +/- 0.5° Effective Aperture >90% Dimensions Customized to customer specifications Diameter Tolerance +0 / -0.05 mm Length Tolerance ±0.2mm Protective Chamfer ≤0.2 × 45° Surface finish 10-5 S-D Flatness ≤λ/10 @ 632.8 nm Analyzing wavefront distortion ≤λ/8 @ 632.8 nm Parallelism <20" Verticality ≤15′ Chipped edge < 0.1 mm Coating Customized to customer specifications
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