GAGG (Ce) (Cerium-doped Gadolinium Aluminum Gallium Garnet) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: GAGG (Ce) (Cerium-doped Gadolinium Aluminum Gallium Garnet) Crystal
GAGG (Ce) (Cerium-doped Gadolinium Aluminum Gallium Garnet) Crystal, with chemical formula Ce:Gd₃Al₂Ga₃O₁₂), is a new type of inorganic scintillation crystal with garnet structure. It has demonstrated outstanding performance among oxide scintillators.
Product Introduction
GAGG (Ce) (Cerium-doped Gadolinium Aluminum Gallium Garnet) Crystal, with chemical formula Ce:Gd₃Al₂Ga₃O₁₂), is a new type of inorganic scintillation crystal with garnet structure. It has demonstrated outstanding performance among oxide scintillators.
The crystal's excellent energy resolution, high density, and characteristics such as no self-absorption and non-deliquescent make it particularly well-suited for applications in gamma spectroscopy, radiation detection, and medical imaging. Its fast decay time makes it suitable for PET imaging systems, while its low afterglow property enables its use in other imaging applications such as human body, industrial, non-destructive testing, security inspection, and X-CT.
Key Advantages
- High energy resolution
- Self-absorption
- Non-deliquescent
- Excellent time and spatial resolution
- Low afterglow & high brightness
- High light outputApplication Areas
-Scanning electron microscopy (SEM)
-Gamma-ray detection & medical imaging
-Nuclear energy & high-energy physics
-X-ray computed tomography (CT)
-Positron emission tomography (PET)
-Computed tomography (CT)
-Particle acceleratorsProduct Features
Material Properties
Crystal Structure
Cubic
Atomic Number
54
Density
6.6 g/cm³
Mohs Hardness
8 Mohs
Energy Resolution
6%
Deliquescence
None
Cleavage Plane
None
Decay Time
90 ns
Light Emission Wavelength
530 nm
Refractive Index
1.9
Afterglow
0.01%
Light Output
46000 Photon/Mev
Melting Point
1850°C
Product Processing Indicators
Effective Aperture
>90%
Dimensions
Customized to Customer Specifications
Diameter Tolerance
+0/-0.05 mm
Length Tolerance
±0.2 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/10@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Coating
Customized to Customers Specifications
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- Luminescent properties
- Radiation resistance
- Short decay time
- Fine energy resolution
- Non-hygroscopic -
- High-energy physics experiments
- Nuclear Medicine
- Environmental Monitoring
- Space Science
- Large Electron-Positron Collider
- Dark Matter Detection -
Material Properties Molecular formula Bi4Ge3O12 Crystal structure Cubic crystal system Lattice constant a = 1.0518 Å Production method Tiraf Method Density 7.12g/cm3 Mohs Hardness 5Mohs Radiation Length 1.1cm Transmittance range 350 nm ~ 5500 nm Relative Light Output (%) 10-14 Nal (Tl) Fluorescence spectrum peak 480–510 nm Recession time 300ns Energy resolution 20 (511 keV, %) Refractive index 2.098 @ 632.8 nm Melting point 1050°C Product Processing Metrics Directional <001> +/- 0.5° Effective Aperture >90% Dimensions Customized to customer specifications Diameter Tolerance +0 / -0.05 mm Length Tolerance ±0.2mm Protective Chamfer ≤0.2 × 45° Surface finish 10-5 S-D Flatness ≤λ/10 @ 632.8 nm Analyzing wavefront distortion ≤λ/8 @ 632.8 nm Parallelism <20" Verticality ≤15′ Chipped edge < 0.1 mm Coating Customized to customer specifications
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