Nd:YAG (Neodymium-doped Yttrium Aluminum Garnet) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Nd:YAG (Neodymium-doped Yttrium Aluminum Garnet) Crystal
Nd:YAG (Neodymium-doped Yttrium Aluminum garnet) crystal is one of the well-established laser crystals obtained by doping Nd ions into YAG crystals.
Product Introduction
Nd:YAG (Neodymium-doped Yttrium Aluminum garnet) crystal is one of the well-established laser crystals obtained by doping Nd ions into YAG crystals. Currently, Nd:YAG crystals are considered among the solid-state laser materials with the best overall performance, offering high gain, low threshold, high efficiency, minimal losses, excellent thermal conductivity, and superior resistance to thermal shock. These exceptional intrinsic properties make Nd:YAG a popular choice for near- and far-infrared solid-state lasers, enabling versatile laser operation modes such as continuous wave, pulsed, Q-switched, mode-locked, frequency doubling, and frequency tripling. As a result, Nd:YAG finds extensive applications in scientific research, medical treatments, industrial processes, and military laser systems.
Key Advantages
- High gain coefficient
- Low laser threshold
- Excellent thermal conductivity and Tthermal shock resistance
- Wide absorption bandwidth
- Suitable for multiple operating modes (continuous, pulsed, Q-switched, mode-locked)Application Areas
- Optical communications
- Lidar and ranging
- Holography
- Medical aesthetic devices
- Near and far-infrared solid-state lasers and their frequency doubling and tripling processes
- Diode-pumped all-solid-state miniature Laser
- Industrial lasers
- High-performance laser instruments
- Optoelectronic countermeasures equipment system
- Laser therapy devices and beauty instrumentsProduct Features
Material Properties
Laser Wavelength
1064 nm
Photon Energy
1.86×10⁻¹⁹J@1064 nm
Emission Linewidth
4.5 Å@1064 nm
Launch Cross-Section
2.7~8.8×10-19 cm²@1 atm%Nd
Fluorescence Lifetime
230 µs @1 atm % Nd
Diode-Pumped Absorption
Wavelength
808 nm
Pump Absorption Bandwidth
1 nm
Main Pump Band Range
400~850 nm
Crystal Structure
Cubic
Melting Point
1970°C
Density
4.56 ± 0.04 g/cm³
Specific Heat
0.59 J/g·cm³@0–20°C
Mohs Hardness
8.5 Mohs
Thermal Expansion Coefficient
<111>Direction 7.8 x 10 -6 ;/K@0~250℃
<100>Direction 8.2 x 10 -6 / K@0~250℃
<110>Direction 7.7 x 10 -6 /K@0~250℃
Thermal Conductivity
14 W/m/K at 20°C
10.5 W/m/K at 100°C
Thermal-Optic Coefficient
7.3x10-6 /K
Refractive Index
1.82
Stimulated Emission Cross Section (nm·cm) -1 )
2.8x10-19 cm²
One-way Loss
0.003cm-1 @1064nm
Product Processing Indicators
Orientation
<111> or <100> ±5°
Nd doping Concentration
0.1 at% to 2.5 at%
Effective Aperture
>90%
Size Range
Diameter or cross-section: 0.5–50 mm,
Length: 0.3–220 mm (customizable)
Dimensional Tolerance
Φ:+0/-0.04 mm, L:+0.5/-0 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/10 @ 632.8 nm
Wavefront Distortion
≤λ/10 @ 632.8 nm
Parallelism
<20"
Perpendicularity
≤10′
Extinction Ratio
≥30 dB
Coating
Anti-reflective Coating:
R<0.15% @ 1064 nm, R<0.5% @ 808 nm, R<0.15% @ 532 nmPartial Reflective Coating: R=(10–90)%±2%@1064 nm
High-reflectivity Coating: R>99.8%@1064 nm, R> 99.8%@808 nm
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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