Yb:YAG (Ytterbium-doped Yttrium Aluminum Garnet) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Yb:YAG (Ytterbium-doped Yttrium Aluminum Garnet) Crystal
Yb:YAG (Ytterbium-doped Yttrium Aluminum Garnet) crystal, with the chemical formula Yb:Y₃Al₅O₁₂, is a laser material doped with trivalent ions in a yttrium aluminum garnet matrix. It stands as one of the most promising solid-state laser materials today.
Product Introduction
Yb:YAG (Ytterbium-doped Yttrium Aluminum Garnet) crystal, with the chemical formula Yb:Y₃Al₅O₁₂, is a laser material doped with trivalent ions in a yttrium aluminum garnet matrix. It stands as one of the most promising solid-state laser materials today.
Yb:YAG is a promising laser material that is better suited for diode pumping compared to traditional Nd-doped laser materials. Compared to the commonly used Nd:YAG crystal, Yb:YAG boasts a wider absorption bandwidth for diode pumping, which significantly reduces the thermal management requirements for laser diodes. Additionally, it features a longer lifetime of its high laser energy levels and generates a thermal load that is 3 to 4 times lower per unit of pump power. As a result, Yb:YAG crystals are expected to replace Nd:YAG crystals in high-power diode lasers and other related applications.
Key Advantages
- Excellent optical quality
- Broad absorption band
- High thermal conductivity, high mechanical strength
- No excited-state absorption and upconversion
- Extremely low local overheating (<11%)
- High thermal conductivity and high mechanical strength
- The heat load generated by the unit pump power is lower than that of the Nd:YAG crystal.Application Areas
- Diode-pumped
- Laser cutting and welding
- Medical surgery
- Holography, tnterference, optical storage, and other related fields
- Lidar and optical cooling
- Multifoton microscopy
- Ultra-short pulse research
- Scientific researchProduct Features
Material Properties
Crystal Structure
Cubic
Melting Point
1970 °C
Density
4.56±0.04 g/cm³
Specific Heat
0.59J/g·cm³@0–20°C
Laser Wavelength
1030 nm
Photon Energy
1.93×10-19 J@1030 nm
Emission Linewidth
9 nm
Fluorescence Lifetime
1.2 ms
Diode-Pumped Absorption
Wavelength
940 nm, 970 nm
Pump Absorption Bandwidth
8 nm
Mohs Hardness
8.5 Mohs
Poisson's Ratio
0.3
Tensile Strength
0.13~0.26 GPa
Coefficient of Thermal Expansion
<100>Direction: 8.2×10 -6 /10°C to 250°C
<110>Direction: 7.7×10 -6 /10°C to 250°C
<111>Direction: 7.8×10 -6 /10°C to 250°C
Thermal Conductivity
14 W/m/K at 20°C
10.5 W/m/K at 100°C
Thermal-Optic Coefficient
7.3×10-6 /K
Refractive Index
1.82@1030 nm
Product Processing Indicators
Orientation
<100>, <110>. <111>
Yb ion Concentration
0.5 at%–25 at%
Effective Aperture
>90%
Size Range
Diameter: 1 mm – 50 mm,
Length: 5 mm – 150 mm
Dimensional Tolerance
Φ:+0/-0.04 mm, L:+0.5/-0 mm
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/10@632.8 nm
Wavefront Distortion
≤λ/8@633 nm
Parallelism
<20"
Perpendicularity
≤10′
Extinction Ratio
≥28 dB
Coating
AR:R<0.15%@1030 nm
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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