LBO (Lithium Triborate) Crystal
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: LBO (Lithium Triborate) Crystal
LBO (Lithium Triborate) Crystal, with chemical formula LiB₃O₅, is a novel nonlinear optical crystal with high damage threshold, wide transmission range (160-2600 nm), and noncritical phase-matching characteristics.
Product Introduction
LBO (Lithium Triborate) Crystal, with chemical formula LiB₃O₅, is a novel nonlinear optical crystal with high damage threshold, wide transmission range (160-2600 nm), and noncritical phase-matching characteristics.
With excellent optical homogeneity, hygroscopic nature, large acceptance angle, and small walk-off angle, it is widely applied in high-average-power second-harmonic generation (SHG), sum-frequency generation (SFG), difference-frequency generation (DFG), third-harmonic generation (THG), fourth-harmonic generation (FHG), and optical parametric oscillation (OPO).
LBO crystal (LiB₃O₅) features a broad optical transmission range of 160-2600 nm, making it highly suitable for high-power military/medical Nd:YAG/Nd:YLF lasers, Ti:Sapphire lasers, and Cr:LiSAF lasers.
Key Advantages
- Wide transparency range (160~2600 nm)
- Excellent optical homogeneity
- The frequency-doubling conversion efficiency is relatively high (equivalent to 3 times that of KDP crystals)
- High damage threshold
- Wide acceptance angle, small walk-off angle
- Non-critical phase-matching (NCPM) offers a wide bandwidth: ideal for diverse phase-matching applicationsApplication Areas
- Pumping of Nd:YVO₄, Nd:YAG, and Nd:YLF lasers
- Ruby, Ti:sapphire, and Cr:LiSAF lasers
- Optical parametric amplifier (OPA) and optical parametric oscillator (OPO)
- Second and third harmonic generation of a high-power 1340nm Nd:YAP laserProduct Features
Material Properties
Crystal Structure
Orthorhombic, Space Group Pna21, Point Proup mm²
Lattice Constant
a=8.4473Å, b=7.3788 Å, c=5.1395Å,Z=4
Density
2.47 g/cm³
Mohs Hardness
6 Mohs
Transparency Range
160~260 nm
Acceptance Angle
6.54 mrad·cm (Φ, Type I, 1064 SHG)
15.27 mrad·cm (θ, Type II, 1064 SHG)
Walk-off Angle
0.60° (Type I, 1064 SHG)
0.12° (Type II, 1064 SHG)
Absorption Coefficient
<0.1%/cm @1064 nm, <0.3%/cm@532 nm
SHG Phase-Matching Range
551–2600 nm (Type I) 790–2150 nm (Type II)
Thermal Expansion Coefficient
α x=10.8×10 -5 /K, α and =-8.8×10 -5 /K, α z = 3.4×10 -5 /K
Thermal Conductivity
3.5 W/m/K
Melting Point
834°C
Product Processing Indicators
Effective Aperture
>90%
Dimensional Tolerance
(W ± 0.1 mm)×(H ± 0.1 mm)×(L ± 0.1 mm)
Chamfer
≤0.2×45°
Surface Quality
10-5 S-D
Flatness
≤λ/8@632.8 nm
Wavefront Distortion
≤λ/8@632.8 nm
Parallelism
<20"
Perpendicularity
≤15′
Chipped Edge
<0.1 mm
Damage Threshold
>10 GW/cm²@1064 nm, 10 ns, 10 Hz (polished wafer)
> 1 GW/cm²@1064 nm, 10 ns, 10 Hz (anti-reflection coating)
> 0.5 GW/cm²@532 nm, 10 ns, 10 Hz (anti-reflection coating)
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- Offers a wide phase-matching bandwidth (409.6–3500 nm)
- Available across a wide wavelength range (190–3500 nm)
- High-frequency conversion efficiency (equivalent to 6 times that of KDP crystals)
- High damage threshold (10 GW/cm² at 1064 nm with a 100-ps pulse width)
- Temperature receiving angle width (around 55°C)
- Excellent optical uniformity: δn ≈ 10⁻⁶ /cm
- Temperature reception angle width (~55 ℃) -
- Second, third, fourth, and fifth harmonic generation of Nd:YAG and Nd:YLF lasers;
- Frequency doubling, tripling, and mixing in dye lasers;
- Second, third, and fourth harmonic generation with Ti:Sapphire and Alexandrite lasers;
- Optical Parametric Amplifier (OPA) and Optical Parametric Oscillator (OPO);
- Frequency doubling of argon-ion, ruby, and Cu vapor lasers;
- In the research and development fields of advanced, precision, and cutting-edge laser technologies such as all-solid-state tunable lasers, ultrafast pulsed lasers, and deep-ultraviolet lasers. -
Material Properties Lattice structure Trigonal crystal system, space group R3c Unit cell parameters a = b = 12.532 Å, c = 12.717 Å, Z = 6 Density 3.85g/cm3 Mohs Hardness 4Mohs Translucent wavelength band 190–3500 nm Resistivity >1011 ohm•cm Electro-optic coefficient γ22 = 2.7 pm/V Acceptance angle 0.8 mrad·cm (θ, Type I, 1064 SHG)
1.27 mrad·cm (θ, Type II, 1064 SHG)
Half-wave voltage 7kV (at 1064 nm, 3x3x20mm³) Absorption coefficient α < 0.1%/cm at 1064 nm
SHG Phase-Matching Range 409.6–3500 nm (Type I) 525–3500 nm (Type II) Coefficient of thermal expansion α11 = 4 × 10⁻⁶ /K, α33 = 36 × 10⁻⁶ /K
Thermal conductivity 1.2 W/m/K (⊥c); 1.6 W/m/K (∥c)
Refractive index @ 1064 nm ne = 1.5425, no = 1.6551 Melting point 1095°C Product Processing Metrics Effective Aperture >90% Dimensional Tolerance (W ± 0.1 mm) × (H ± 0.1 mm) × (L ± 0.1 mm) Protective Chamfer ≤0.2 × 45° Surface finish 10-5 S-D Flatness ≤λ/8 @ 632.8 nm Wavefront Distortion ≤λ/8 @ 632.8 nm Parallelism <30" Verticality ≤15′ Chipped edge <0.1 mm Damage threshold >1 GW/cm² @ 1064 nm, 10 ns, 10 Hz (anti-reflection coating)
> 0.3 GW/cm² @ 532 nm, 10 ns, 10 Hz (anti-reflection coating)
> 1.5 GW/cm² @ 1064 nm, 10 ns, 10 Hz (polished wafer)
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