LiNbO₃ (Lithium Niobate ) Crystal

LiNbO₃ (Lithium Niobate ) crystal is an inorganic compound with the chemical formula LiNbO₃,which is a negative-type crystal and a ferroelectric material. When subjected to polarization treatment, lithium niobate crystals exhibit multifunctional properties, including piezoelectric, ferroelectric, optoelectronic, nonlinear optical, and thermoelectric characteristics, while also demonstrating a photorefractive effect.

Keywords:

Laser Crystals

Magneto-Optic Crystals

Scintillation Crystals

Product Category:

  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: LiNbO₃ (Lithium Niobate ) Crystal

    LiNbO₃ (Lithium Niobate ) crystal is an inorganic compound with the chemical formula LiNbO₃,which is a negative-type crystal and a ferroelectric material. When subjected to polarization treatment, lithium niobate crystals exhibit multifunctional properties, including piezoelectric, ferroelectric, optoelectronic, nonlinear optical, and thermoelectric characteristics, while also demonstrating a photorefractive effect.

    Product Introduction

    LiNbO₃ (Lithium Niobate ) crystal is an inorganic compound with the chemical formula LiNbO₃,which is a negative-type crystal and a ferroelectric material. When subjected to polarization treatment, lithium niobate crystals exhibit a remarkable combination of properties, including piezoelectric, ferroelectric, optoelectronic, nonlinear optical, and thermoelectric characteristics, while also displaying the photorefractive effect. As an electro-optic material, lithium niobate plays a crucial role in optical communication by enabling light modulation. Moreover, its single crystals are indispensable materials for applications such as optical waveguides, mobile phones, piezoelectric sensors, optical modulators, and various other linear and nonlinear optical devices.

    LiNbO₃ crystals are currently widely used piezoelectric, ferroelectric, and electro-optic materials. Notably, they exhibit excellent electro-optic and nonlinear optical properties, making them highly valuable in laser technology. These applications primarily include Q-switching in Nd:YAG, Nd:YLF, and Ti-doped sapphire lasers, as well as frequency doubling for wavelengths above 1000 nm, parametric oscillators, and terahertz radiation generation.

     

    Key Advantages

    - Miniaturization and resistant to deliquescence 
    - Stable mechanical and chemical properties, with high-temperature stability 
    - Large electro-optic coefficient, high electro-optic efficiency 
    - Wide transparency range, low absorption loss 
    - Easily grows into large crystals 
    - Low damage threshold

     

    Application Areas

    - Medical applications 
    - Holography 

    - Frequency doubling for wavelengths exceeding 1000 nm and optical parametric amplification using a 1064 nm pump light. 
    - 532nm laser -1064nm laser -2940nm laser 
    - Pulsed laser rangefinder

    - Optoelectronic Q-switch

     

    Product Features

    Material Properties

    Crystal Structure

    Trigonal, Space Group R3c, Point Group 3m

    Lattice Constant

    a=5.148Å,c =13.863Å

    Density

    4.64 g/cm³

    Mohs Hardness

    5 Mohs

    Transparency Range

    420~5200 nm

    Electro-Optic Coefficient

    γ T ₃₃=32 pm/V, γ S ₃₃=31 pm/V, γ T ₃₁=10 pm/V, γ S ₃₁= 8.6pm/V,

    γ T ₂₂=6.8 pm/V, γ S ₂₂=3.4 pm/V,

    Thermal Conductivity (@ 25 ℃)

    38 W/m/K

    Absorption Coefficient

    0.1%/cm @1064nm

    Piezoelectric Constants

    D₂₂=2.04×10⁻¹¹ C/N; D₃₃=19.22×10⁻¹¹ C/N

    Thermal Expansion Coefficient (@ 25°C)

    //a, 2.0×10⁻⁶ /K, //c, 2.2×10⁻⁶ /K

    Refractive Index

    ne=2.146, no=2.220@1300 nm, /ne=2.156, no= 2.232@1064 nm

    ; /ne=2.203, no=2.286 @ 632.8nm

    Curie Temperature

    1140°C

    Melting Point

    1253°C

    Product Processing Indicators

    Effective Aperture

    >90%

    Dimensional Tolerance

    (W ± 0.1 mm) × (H ± 0.1 mm) × (L ± 0.1 mm)

    Chamfer

    ≤0.2×45°

    Surface Quality

    10-5 S-D

    Flatness

    ≤λ/8@632.8nm

    Wavefront Distortion

    ≤λ/4@632.8nm

    Parallelism

    <20"

    Perpendicularity

    ≤15′

    Chipped Edge

    <0.1mm

    Coating

    AR at 1064 nm + 532 nm, with low reflectivity R < 0.2% at 1064 nm and R < 0.2% at 532 nm; coatings such as anti-reflection films or gold/chromium options are available, and custom coating services can be provided.

  • - Offers a wide phase-matching bandwidth (409.6–3500 nm)
    - Available across a wide wavelength range (190–3500 nm)
    - High-frequency conversion efficiency (equivalent to 6 times that of KDP crystals)
    - High damage threshold (10 GW/cm² at 1064 nm with a 100-ps pulse width)
    - Temperature receiving angle width (around 55°C)
    - Excellent optical uniformity: δn ≈ 10⁻⁶ /cm
    - Temperature reception angle width (~55 ℃)

  • - Second, third, fourth, and fifth harmonic generation of Nd:YAG and Nd:YLF lasers;
    - Frequency doubling, tripling, and mixing in dye lasers;
    - Second, third, and fourth harmonic generation with Ti:Sapphire and Alexandrite lasers;
    - Optical Parametric Amplifier (OPA) and Optical Parametric Oscillator (OPO);
    - Frequency doubling of argon-ion, ruby, and Cu vapor lasers;
    - In the research and development fields of advanced, precision, and cutting-edge laser technologies such as all-solid-state tunable lasers, ultrafast pulsed lasers, and deep-ultraviolet lasers.

  • Material Properties
    Lattice structure Trigonal crystal system, space group R3c
    Unit cell parameters a = b = 12.532 Å, c = 12.717 Å, Z = 6
    Density 3.85g/cm3
    Mohs Hardness 4Mohs
    Translucent wavelength band 190–3500 nm
    Resistivity >1011 ohm•cm
    Electro-optic coefficient γ22 = 2.7 pm/V
    Acceptance angle

    0.8 mrad·cm (θ, Type I, 1064 SHG)

    1.27 mrad·cm (θ, Type II, 1064 SHG)

    Half-wave voltage 7kV (at 1064 nm, 3x3x20mm³)
    Absorption coefficient

    α < 0.1%/cm at 1064 nm

    SHG Phase-Matching Range 409.6–3500 nm (Type I) 525–3500 nm (Type II)
    Coefficient of thermal expansion

    α11 = 4 × 10⁻⁶ /K, α33 = 36 × 10⁻⁶ /K

    Thermal conductivity

    1.2 W/m/K (⊥c); 1.6 W/m/K (∥c)

    Refractive index @ 1064 nm ne = 1.5425, no = 1.6551
    Melting point 1095°C
    Product Processing Metrics
    Effective Aperture >90%
    Dimensional Tolerance (W ± 0.1 mm) × (H ± 0.1 mm) × (L ± 0.1 mm)
    Protective Chamfer ≤0.2 × 45°
    Surface finish 10-5 S-D
    Flatness ≤λ/8 @ 632.8 nm
    Wavefront Distortion ≤λ/8 @ 632.8 nm
    Parallelism <30"
    Verticality ≤15′
    Chipped edge <0.1 mm
    Damage threshold

    >1 GW/cm² @ 1064 nm, 10 ns, 10 Hz (anti-reflection coating)

    > 0.3 GW/cm² @ 532 nm, 10 ns, 10 Hz (anti-reflection coating)

    > 1.5 GW/cm² @ 1064 nm, 10 ns, 10 Hz (polished wafer)

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