Er,Yb:YAB (Erbium-Ytterbium Co-doped Yttrium Aluminum Borate) Crystal

Er,Yb:YAB (Erbium- and ytterbium-codoped aluminum yttrium borate) crystal is a high-performance laser material with excellent overall characteristics. It is widely used in fiber optic communication systems as a key component in passive optical devices such as isolators, rotators, delay lines, and polarizers.

Keywords:

Scintillation Crystals

Product Category:

  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: Er,Yb:YAB (Erbium-Ytterbium Co-doped Yttrium Aluminum Borate) Crystal

    Er,Yb:YAB (Erbium- and ytterbium-codoped aluminum yttrium borate) crystal is a high-performance laser material with excellent overall characteristics. It is widely used in fiber optic communication systems as a key component in passive optical devices such as isolators, rotators, delay lines, and polarizers.

    Product Introduction

    Er,Yb:YAB (Erbium- and ytterbium-codoped aluminum yttrium borate) crystal is a high-performance laser material with excellent overall characteristics. It is widely used in fiber optic communication systems as a key component in passive optical devices such as isolators, rotators, delay lines, and polarizers. 

    Erbium- and ytterbium-codoped yttrium aluminum borate crystals (Er,Yb:YAB crystals) are a common alternative to Er/Yb-doped phosphate glasses, serving as a "human-eye-safe" active medium for lasers operating in the 1.5–1.6 μm wavelength range, delivering high average output power in both continuous-wave and pulsed modes.    

    Er,Yb:YAB is a laser crystal with outstanding overall performance, offering exceptional smoke-penetration capability at 1550 nm, high transparency in the atmosphere, and superior sensitivity when paired with room-temperature Ge and InGaAs photodiodes. As a result, it finds wide-ranging applications in fields such as LiDAR-based ranging, 3D imaging, and target recognition.    

    Er,Yb:YAB boasts high thermal conductivity, large absorption and emission cross sections, and a wide absorption bandwidth. It can be used in ultrashort pulse mode-locked lasers, LiDAR systems, and passively Q-switched lasers.

     

    Key Advantages

    - High Thermal Conductivity    
    - High Absorption and Emission Cross Sections    
    - A Uniaxial Crystal with a Triangular Structure    
    - A Broad Absorption Bandwidth Centered around 976 nm    
    - High Absorption and Emission Cross Sections    
    - Extremely High Yb 3+ To Er 3+ Energy Transfer Efficiency

     

    Application Areas

    - Ultra-short pulse mode-locked lasers for telecommunications systems    
    - High-power, eye-safe (~1.5 μm) continuous-wave laser metrology    
    - High-repetition-rate passively Q-switched laser for LiDAR and LIBS systems    
    - For Laser Rangefinders

     

    Product Features

    Basic Material Properties

    Pump Wavelength

    976 nm

    Peak Absorption Cross Section

    3 × 10 -20 cm² (σ-polarization)

    Absorption Band Half-Width at Half maximum

    19 nm

    Laser Wavelength

    15201600 nm

    Fluorescence Lifetime

    0.3 ms

    Peak Emission Cross-Section

    2×10 -20 cm² (σ-polarization)

    Yb to Er Energy Transfer Efficiency

    >90%

    Refractive Index (@ 632.8 nm)

    no=1.7757, ne=1.7015

    Crystal Structure

    Trigonal

    Density

    3.7 g/cm³

    Mohs Hardness

    7.5 Mohs

    Thermal Conductivity

    4.7 W/m/K

     Thermal Expansion Coefficient

    ⊥c: 2.0×10-6K-1 //c: 9.7×10-6K-1(25 at.% Yb3+ )

    ⊥c:1.2×10-6K-1//c:8.5×10-6K-1(10 at.% Yb3+ )

    Typical Doping Standards

    1-2 at.% [Er]

    8-15 at.% [Yb]

    Product Processing Indicators

    Oritentation

    c-cut

    Doping Concentration

    He 3+:0.1~3 at.%, Yb3+:5~30 at.%

    Effective Aperture

    >90%

    Cross-Section

    (1×1) to (15×15) mm 2

    Thickness

    0.5–10 mm

    Chamfer

    ≤0.2×45°

    Surface Quality

    10-5 S-D

    Flatness

    ≤λ/6@633 nm

    Wavefront Distortion

    ≤λ/8@633 nm

    Parallelism

    30"

    Perpendicularity

    ≤15′

    Coating

    AR or HR Coating

  • - Excellent thermal conductivity
    - Multiple possible pump wavelengths (typically 532 nm)
    - Broad-wavelength tunability
    - Broadly Absorbing Pump Band
    - Outstanding output efficiency
    - Short-lived excited state (3.2 μm)
    - Narrow mode-locking width
    - High damage threshold

  • - Mode-locked laser with ultrashort pulses
    - Multi-channel Amplifiers and Regenerative Amplifiers
    - The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
    - By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
    -Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range.

  • Basic Material Properties
    Molecular formula Ti³⁺:Al₂O₃
    Crystal structure Hexagonal crystal system
    Lattice constant a = 4.758 Å, c = 12.991 Å
    Density 3.98g/cm3
    Melting point 2040°C
    Mohs Hardness 9Mohs
    Thermal conductivity 52W/m/k
    Specific heat 0.42J/g/K
    Laser generation Four-level system
    Fluorescence lifetime 3.2 μs (T = 300 K)
    Tuning range 660-1050nm
    Absorption range 400-600nm
    Emission peak 795nm
    Absorption peak 488nm
    Refractive index 1.76 @ 800 nm
    Peak cross-section 3–4 × 10⁻¹⁹ cm²
    Coefficient of thermal expansion 8.40 × 10⁻⁶/°C

     

    Product Processing Metrics
    Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface.
    Ti2O3 concentration 0.06–0.26 at.%
    Quality factor 100–300 units
    Effective Aperture >90%
    Surface Dimension Tolerance 0 / -0.1 mm
    Thickness Tolerance ±0.1 mm
    Protective Chamfer ≤0.2 × 45°
    End face Double parallel planes or Brewster-cut ends
    Surface finish 10-5 S-D
    Flatness ≤λ/8 @ 633 nm
    Transmitted Wavefront Distortion ≤λ/4 @ 633 nm
    Parallelism 30"
    Verticality ≤15′
    Custom film system services available

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