Ti:Sapphire (Titanium doped Sapphire)
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Ti:Sapphire (Titanium doped Sapphire)
Titanium-doped sapphire (Ti:Sapphire) is extensively utilized in high-power, high-gain, broadband tunable ultrashort-pulse lasers, as well as in tunable laser systems and femtosecond solid-state lasers, establishing it as a premier material for generating ultra-short pulses.
Product Introduction
Titanium-doped sapphire (Ti:Sapphire) is extensively utilized in high-power, high-gain, broadband tunable ultrashort-pulse lasers, as well as in tunable laser systems and femtosecond solid-state lasers, establishing it as a premier material for generating ultra-short pulses.
Ti:Sapphire crystals exhibit an exceptionally broad emission bandwidth, with a tunable range spanning 660–1050 nm—the widest among wavelength-tunable laser crystals. Centered around 490 nm, the Ti:Sapphire absorption band ensures compatibility with diverse laser pumping sources, including argon-ion lasers, frequency-doubled Nd:YAG and Nd:YLF lasers, and copper-vapor lasers. Owing to its 3.2-μs fluorescence lifetime, Ti:Sapphire can be efficiently pumped in high-power laser systems using short-pulse flash lamps. Through self-mode-locking technology, titanium-sapphire lasers can directly produce ultrashort laser pulses with durations as narrow as less than 6.5 fs, making them the shortest pulses ever generated directly from resonator cavities. Furthermore, by employing dual-frequency techniques, these lasers can achieve an exceptionally wide spectral coverage, extending from the blue light region into the deep ultraviolet. Notably, the resulting 193 nm laser has become indispensable in advanced lithography equipment.
Key Advantages
- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly absorbing pump band
- Outstanding output efficiency
- Short excited-state lifetime (3.2 μm)
- Narrow mode-locking width
- High damage thresholdApplication Areas
- Mode-locked laser with ultrashort pulses
- Multi-channel amplifier and regenerative amplifier
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as under 10 fs, spanning the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range.Product Features
Basic Material Properties
Molecular Formula
Ti³⁺: Al₂O₃
Crystal Structure
Hexagonal
Lattice Constant
a=4.758Å, c=12.991Å
Density
3.98 g/cm³
Melting Point
2040°C
Mohs Hardness
9 Mohs
Thermal Conductivity
52 W/m/k
Specific Heat
0.42 J/g/K
Laser Generation
Four-Level
Fluorescence Lifetime
3.2 μs (T=300K)
Transmission Range
660–1050 nm
Absorption Range
400–600 nm
Emission Peak
795 nm
Absorption Peak
488 nm
Refractive Index
1.76@800 nm
Peak Cross-section
3–4×10⁻¹⁹ cm²
Thermal Expansion Coefficient
8.40×10⁻⁶/°C
Product Processing Indicators
Orientation
The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 Concentration
0.06–0.26 at.%
Quality Factor
100–300 units
Effective Aperture
>90%
Dimension Tolerance
0/-0.1 mm
Thickness Tolerance
±0.1 mm
Chamfer
≤0.2×45°
End face
Double parallel planes or Brewster-cut ends
Surface Quality
10-5 S-D
Flatness
≤λ/8@633 nm
Wavefront Distortion
≤λ/4@633 nm
Parallelism
30"
Perpendicularity
≤15′
Custom coating services available
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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