Ti:Sapphire (Titanium doped Sapphire)

Titanium-doped sapphire (Ti:Sapphire) is extensively utilized in high-power, high-gain, broadband tunable ultrashort-pulse lasers, as well as in tunable laser systems and femtosecond solid-state lasers, establishing it as a premier material for generating ultra-short pulses.

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Scintillation Crystals

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  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: Ti:Sapphire (Titanium doped Sapphire)

    Titanium-doped sapphire (Ti:Sapphire) is extensively utilized in high-power, high-gain, broadband tunable ultrashort-pulse lasers, as well as in tunable laser systems and femtosecond solid-state lasers, establishing it as a premier material for generating ultra-short pulses.

    Product Introduction

    Titanium-doped sapphire (Ti:Sapphire) is extensively utilized in high-power, high-gain, broadband tunable ultrashort-pulse lasers, as well as in tunable laser systems and femtosecond solid-state lasers, establishing it as a premier material for generating ultra-short pulses.

    Ti:Sapphire crystals exhibit an exceptionally broad emission bandwidth, with a tunable range spanning 660–1050 nm—the widest among wavelength-tunable laser crystals. Centered around 490 nm, the Ti:Sapphire absorption band ensures compatibility with diverse laser pumping sources, including argon-ion lasers, frequency-doubled Nd:YAG and Nd:YLF lasers, and copper-vapor lasers. Owing to its 3.2-μs fluorescence lifetime, Ti:Sapphire can be efficiently pumped in high-power laser systems using short-pulse flash lamps. Through self-mode-locking technology, titanium-sapphire lasers can directly produce ultrashort laser pulses with durations as narrow as less than 6.5 fs, making them the shortest pulses ever generated directly from resonator cavities. Furthermore, by employing dual-frequency techniques, these lasers can achieve an exceptionally wide spectral coverage, extending from the blue light region into the deep ultraviolet. Notably, the resulting 193 nm laser has become indispensable in advanced lithography equipment.

     

    Key Advantages

    - Excellent thermal conductivity 
    - Multiple possible pump wavelengths (typically 532 nm) 
    - Broad-wavelength tunability 
    - Broadly absorbing pump band
    - Outstanding output efficiency 
    - Short excited-state lifetime (3.2 μm) 
    - Narrow mode-locking width 
    - High damage threshold

     

    Application Areas

    - Mode-locked laser with ultrashort pulses 
    - Multi-channel amplifier and regenerative amplifier 
    - The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications. 
    - By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as under 10 fs, spanning the ultraviolet to deep-ultraviolet range—down to as low as 193 nm. 
    -Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range.

     

    Product Features

    Basic Material Properties

    Molecular Formula

    Ti³⁺: Al₂O₃

    Crystal Structure

    Hexagonal

    Lattice Constant

    a=4.758Å, c=12.991Å

    Density

    3.98 g/cm³

    Melting Point

    2040°C

    Mohs Hardness

    9 Mohs

    Thermal Conductivity

    52 W/m/k

    Specific Heat

    0.42 J/g/K

    Laser Generation

    Four-Level

    Fluorescence Lifetime

    3.2 μs (T=300K)

    Transmission Range

    660–1050 nm

    Absorption Range

    400–600 nm

    Emission Peak

    795 nm

    Absorption Peak

    488 nm

    Refractive Index

    1.76@800 nm

    Peak Cross-section

    3–4×10⁻¹⁹ cm²

    Thermal Expansion Coefficient

    8.40×10⁻⁶/°C

    Product Processing Indicators

    Orientation

    The C-axis is the optical axis direction, which is perpendicular to the crystal surface.

    Ti2O3 Concentration

    0.06–0.26 at.%

    Quality Factor

    100–300 units

    Effective Aperture

    >90%

    Dimension Tolerance

    0/-0.1 mm

    Thickness Tolerance

    ±0.1 mm

    Chamfer

    ≤0.2×45°

    End face

    Double parallel planes or Brewster-cut ends

    Surface Quality

    10-5 S-D

    Flatness

    ≤λ/8@633 nm

    Wavefront Distortion

    ≤λ/4@633 nm

    Parallelism

    30"

    Perpendicularity

    ≤15′

    Custom coating services available

  • - Excellent thermal conductivity
    - Multiple possible pump wavelengths (typically 532 nm)
    - Broad-wavelength tunability
    - Broadly Absorbing Pump Band
    - Outstanding output efficiency
    - Short-lived excited state (3.2 μm)
    - Narrow mode-locking width
    - High damage threshold

  • - Mode-locked laser with ultrashort pulses
    - Multi-channel Amplifiers and Regenerative Amplifiers
    - The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
    - By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
    -Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range.

  • Basic Material Properties
    Molecular formula Ti³⁺:Al₂O₃
    Crystal structure Hexagonal crystal system
    Lattice constant a = 4.758 Å, c = 12.991 Å
    Density 3.98g/cm3
    Melting point 2040°C
    Mohs Hardness 9Mohs
    Thermal conductivity 52W/m/k
    Specific heat 0.42J/g/K
    Laser generation Four-level system
    Fluorescence lifetime 3.2 μs (T = 300 K)
    Tuning range 660-1050nm
    Absorption range 400-600nm
    Emission peak 795nm
    Absorption peak 488nm
    Refractive index 1.76 @ 800 nm
    Peak cross-section 3–4 × 10⁻¹⁹ cm²
    Coefficient of thermal expansion 8.40 × 10⁻⁶/°C

     

    Product Processing Metrics
    Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface.
    Ti2O3 concentration 0.06–0.26 at.%
    Quality factor 100–300 units
    Effective Aperture >90%
    Surface Dimension Tolerance 0 / -0.1 mm
    Thickness Tolerance ±0.1 mm
    Protective Chamfer ≤0.2 × 45°
    End face Double parallel planes or Brewster-cut ends
    Surface finish 10-5 S-D
    Flatness ≤λ/8 @ 633 nm
    Transmitted Wavefront Distortion ≤λ/4 @ 633 nm
    Parallelism 30"
    Verticality ≤15′
    Custom film system services available

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