TGG (Terbium Gallium Garnet)

TGG (Terbium Gallium Garnet, Tb₃Ga₅O₁₂) is a high-performance magneto-optical crystal used in the visible and near-infrared spectral ranges (400–470 nm and 500–1500 nm).

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Scintillation Crystals

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  • Product Introduction
  • Key advantages
  • Application areas
  • Product Features
    • Commodity name: TGG (Terbium Gallium Garnet)

    TGG (Terbium Gallium Garnet, Tb₃Ga₅O₁₂) is a high-performance magneto-optical crystal used in the visible and near-infrared spectral ranges (400–470 nm and 500–1500 nm).

    Product Introduction

    TGG (Tb₃Ga₅O₁₂, terbium gallium garnet) is a high-performance magneto-optical crystal suitable for the visible and near-infrared spectral regions (400–470 nm and 500–1500 nm). It finds extensive applications in laser technology, optical communications, and optical information-processing systems. In the visible and near-infrared ranges, TGG exhibits a high Verdet constant, low transmission loss, high thermal conductivity, a high laser-induced damage threshold, and the ability to grow large-sized crystals, making it the optimal magneto-optical material for fabricating Faraday rotators and isolators in this wavelength band (400–1100 nm, excluding 470–500 nm). It is well suited for use in magneto-optical isolators, switches, modulators, and other devices. Additionally, TGG is widely employed in multi-stage amplification, ring, and seed-injection lasers based on YAG and titanium-doped sapphire.

     

      Main advantages

    - Wilder constant (40 Rad T -1 m -1
    - Low optical loss (<0.1%/cm) 
    - High thermal conductivity (4 W/m -1 K -1
    - High laser damage threshold (> 1 GW/cm²) 
    - Absorption coefficient (<0.1%/cm)

     

      Application Fields

    - Ion-irradiated magneto-optical waveguide 
    -Faraday rotator 
    - Fiber optic isolator 
    - Free-space isolator 
    - Magneto-optical switches and magneto-optical modulators

     

      Product Features

    Material Properties 
    Molecular formulaTb₃Ga₅O₁₂
    Crystal structureCubic crystal system
    Mode of productionLifting method
    Density7.13 g/cm³
    Mohs hardness8 Mohs
    Unit cell parametersa=12.355 Å
    Transmittance range400 nm ~ 1100 nm
    Verdet constant (rad/T/m)40 @1064nm
    Refractive index1.954 at 1064 nm
    Melting point1725°C
    Product Processing Metrics 
    Orientation

    [111]±15′

    Extinction ratio≥30 dB
    Effective Aperture>90%
    Maximum size<∮100mm
    Diameter tolerance+0/-0.05 mm
    Length tolerance±0.2 mm
    Protective Chamfer≤0.2×45°
    Surface finish10-5 S-D
    Flatness≤λ/8 at 632.8 nm
    Wavefront Aberration Profiling≤λ/8 at 632.8 nm
    Parallelism<20"
    Verticality≤15′
    Edge collapse<0.1mm
    CoatingAR: R < 0.2% @ 1064 nm
  • - High magneto-optic constant (35 Rad T⁻¹m⁻¹).
    - Low light loss (<0.1% / cm)
    - High thermal conductivity (4 W m⁻¹K⁻¹).
    - High laser damage threshold (> 1 GW/cm²).
    - Absorption coefficient (<0.1%/cm)

  • - Ion-Irradiated Magneto-Optic Waveguide
    - Faraday Rotator
    - Fiber optic isolator
    - Free-space isolator
    - Magneto-optic switches and magneto-optic modulators

  • Material Properties
    Molecular formula Tb3Ga5O12
    Crystal structure Cubic crystal system
    Production method Tiraf Method
    Density 7.13g/cm3
    Mohs Hardness 8Mohs
    Unit cell parameters a = 12.355 Å
    Transmittance range 400 nm to 1100 nm
    Wiedemann constant (rad/T/m) 40 at 1064nm
    Refractive index 1.954 @ 1064 nm
    Melting point 1725°C
    Product Processing Metrics
    Directional

    [111] ±15′

    Extinction Ratio ≥30dB
    Effective Aperture >90%
    Maximum size <∮100mm
    Diameter Tolerance +0 / -0.05 mm
    Length Tolerance ±0.2 mm
    Protective Chamfer ≤0.2 × 45°
    Surface finish 10-5 S-D
    Flatness ≤λ/8 @ 632.8 nm
    Analyzing wavefront distortion ≤λ/8 @ 632.8 nm
    Parallelism <20"
    Verticality ≤15′
    Chipped edge <0.1 mm
    Coating AR:R < 0.2% @ 1064 nm

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