Nd:YAG (neodymium-doped yttrium aluminum garnet)
Keywords:
Scintillation Crystals
- Product Introduction
- Key advantages
- Application areas
- Product Features
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- Commodity name: Nd:YAG (neodymium-doped yttrium aluminum garnet)
Nd:YAG is one of the well-established laser crystals, obtained by doping YAG crystals with Nd ions.
Product Introduction
Nd:YAG is one of the well‑established laser crystals, obtained by doping YAG crystals with Nd³⁺ ions. It is currently a solid‑state laser material with excellent overall performance, characterized by high gain, low threshold, high efficiency, low loss, and favorable thermal conductivity and resistance to thermal shock. Its superior intrinsic properties make it widely used in near‑ and far‑infrared solid‑state lasers, supporting a variety of operating modes—including continuous wave, pulsed, Q‑switched, mode‑locked, frequency‑doubled, and frequency‑tripled—thus finding extensive applications in scientific research, medicine, industry, and military laser systems.
Main advantages
- High gain coefficient
- Low laser threshold
- Excellent thermal conductivity and thermal shock resistance
- Wide absorption bandwidth
- Suitable for multiple operating modes (continuous, pulsed, Q-switched, mode-locked)Application areas
-Optical communication
- LiDAR and Ranging
- Holography
- Medical aesthetic devices
- Near- and far-infrared solid-state lasers and their second- and third-harmonic generation, respectively
- Diode-pumped all-solid-state miniature laser
-Industrial laser
- High-performance laser instrument
- Electro-optical Countermeasure Equipment System
- Laser therapy devices and beauty devicesProduct Features
Material Properties
Laser wavelength
1064 nm
Photon energy
1.86×10⁻¹⁹ J @ 1064 nm
Laser linewidth
4.5 Å @ 1064 nm
Launch cross-section
2.7~8.8×10 -19 cm²@1at%Nd
Fluorescence lifetime
230µs@1at%Nd
Diode-pumped absorption wavelength
808 nm
Pump absorption bandwidth
1 nm
Main pump belt range
400~850nm
Crystal structure
Cubic crystal system
Melting point
1970°C
Density
4.56±0.04 g/cm³
Specific heat
0.59 J/g·cm³ @ 0–20 °C
Mohs hardness
8.5
Thermal expansion coefficient
<111>Direction 7.8x10 -6 ;/K@0~250℃
<100>Direction 8.2x10 -6 /K@0~250℃
<110>Direction 7.7x10 -6 /K@0~250℃
Thermal conductivity
14 W/m/K at 20°C
10.5 W/m/K @ 100°C
Thermo-optic coefficient
7.3x10 -6 /K
Refractive index
1.82
Stimulated emission cross-section (nm·cm) -1 )
2.8x10 -19 cm²
One-way loss
0.003cm -1 @1064nm
Product Processing Specifications
Targeted
<111> or <100> ±5°
Nd doping concentration
0.1 at% ~ 2.5 at%
Effective aperture
>90%
Size range
Diameter or cross-section: 0.5–50 mm,
Length: 0.3–220 mm (customizable)
Dimensional tolerance
Φ:+0/-0.04mm,L:+0.5/-0mm
Protective Chamfer
≤0.2×45°
Surface finish
10-5 S-D
Flatness
≤λ/10@632.8nm
Wavefront distortion
≤λ/10@632.8nm
Parallelism
<20"
Perpendicularity
≤10′
Extinction ratio
≥30dB
Coating
Anti-reflective coating:
R<0.15%@1064nm, R<0.5%@808nm, R<0.15%@532nmPartial reflection coating: R = (10–90)% ±2% at 1064 nm
High-Reflectance Coating: R > 99.8% @ 1064 nm, R > 99.8% @ 808 nm
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- Excellent thermal conductivity
- Multiple possible pump wavelengths (typically 532 nm)
- Broad-wavelength tunability
- Broadly Absorbing Pump Band
- Outstanding output efficiency
- Short-lived excited state (3.2 μm)
- Narrow mode-locking width
- High damage threshold -
- Mode-locked laser with ultrashort pulses
- Multi-channel Amplifiers and Regenerative Amplifiers
- The tunable wavelength range allows Ti:Sapphire lasers to replace dye lasers in many applications.
- By using ultra-thin, non-critically phase-matched crystals like BBO as frequency-doubling devices, Ti:Sapphire lasers can generate ultrashort pulses as short as below 10 fs, producing light in the ultraviolet to deep-ultraviolet range—down to as low as 193 nm.
-Ti:Sapphire is also widely used as a pump source for optical parametric oscillators to broaden their tuning range. -
Basic Material Properties Molecular formula Ti³⁺:Al₂O₃ Crystal structure Hexagonal crystal system Lattice constant a = 4.758 Å, c = 12.991 Å Density 3.98g/cm3 Melting point 2040°C Mohs Hardness 9Mohs Thermal conductivity 52W/m/k Specific heat 0.42J/g/K Laser generation Four-level system Fluorescence lifetime 3.2 μs (T = 300 K) Tuning range 660-1050nm Absorption range 400-600nm Emission peak 795nm Absorption peak 488nm Refractive index 1.76 @ 800 nm Peak cross-section 3–4 × 10⁻¹⁹ cm² Coefficient of thermal expansion 8.40 × 10⁻⁶/°C Product Processing Metrics Directional The C-axis is the optical axis direction, which is perpendicular to the crystal surface. Ti2O3 concentration 0.06–0.26 at.% Quality factor 100–300 units Effective Aperture >90% Surface Dimension Tolerance 0 / -0.1 mm Thickness Tolerance ±0.1 mm Protective Chamfer ≤0.2 × 45° End face Double parallel planes or Brewster-cut ends Surface finish 10-5 S-D Flatness ≤λ/8 @ 633 nm Transmitted Wavefront Distortion ≤λ/4 @ 633 nm Parallelism 30" Verticality ≤15′ Custom film system services available
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